ff302

Article re-posted with permission from Parker Hannifin Sealing & Shielding Team.
Original content can be found on Parker’s Blog.

Semiconductor FFKM Offers Low Particle Generation AND Extreme Etch Resistance

In the world of semiconductor manufacturing, performance requirements are driving circuit sizes smaller and smaller, causing increased sensitivity to wafer defects. In parallel, the number of manufacturing steps has also increased driving a need for improved tool utilization and leaving more opportunity for these defects to be introduced. Identifying and eliminating the sources of defects is a tedious but necessary process to improve wafer yield.

What impact does seal contamination make?

One very distinct source of defects are the seals within a fab’s tool. Plasmas involved in both deposition, etch and cleaning processes utilize aggressive chemistries that put even high-functioning perfluorinated sealing compounds to the test. Much room for improvement has been left in this industry with many seal materials still posing significant threats to defectivity or downtime despite being designed for low particle generation or etch resistance.

How can Parker ULTRA^™ change the industry?

Parker’s Ultra^TM FF302 Perfluorelastomer has proven success in CVD and etch applications, putting this material at the top of its class.  Typically, seal materials for semiconductor applications are optimized for low particulation or extreme etch resistance, however, Ultra FF302 provides both attributes in one material.  Laboratory testing shows Ultra FF302 has lower erosion in aggressive plasma chemistries even when compared to today’s leading elastomeric materials (Figure 1 below shows comparison erosion levels of various etch resistant perfluoroelastmers after exposure to O₂ plasma).